Infineon IPZA60R060P7 CoolMOS™ P7 600V Power MOSFET for High-Efficiency Applications

Release date:2025-11-10 Number of clicks:159

Infineon IPZA60R060P7 CoolMOS™ P7 600V Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPZA60R060P7, a 600V CoolMOS™ P7 Power MOSFET engineered to set new benchmarks in performance for a wide array of high-efficiency applications.

The cornerstone of the IPZA60R060P7's superiority is its exceptionally low figure-of-merit (RDS(on) x Qg). With a maximum on-state resistance of just 60 mΩ and optimized gate charge (Qg), this device achieves an outstanding balance between conduction and switching losses. This is particularly critical in switch-mode power supplies (SMPS), where these losses directly impact overall efficiency, especially under light-load conditions mandated by global energy standards like ErP and 80 PLUS.

A key innovation in the CoolMOS™ P7 technology is the integration of a robust and fast body diode. This feature is indispensable in hard-switching and resonant topologies, such as Power Factor Correction (PFC) stages and LLC resonant converters. The diode's superior reverse recovery characteristics minimize switching losses and reduce electromagnetic interference (EMI), leading to cleaner switching and allowing for higher operating frequencies. This, in turn, enables the design of smaller, more compact magnetic components and filter elements, significantly boosting power density.

Furthermore, the IPZA60R060P7 is designed with enhanced ruggedness and reliability. It offers excellent immunity against gate oscillations and a high tolerance to dynamic dv/dt events, ensuring stable and robust operation in demanding environments. This makes it an ideal solution not only for server and telecom power supplies but also for industrial motor drives, solar inverters, and fast-charging infrastructure.

In summary, by delivering a combination of ultra-low losses, high switching speed, and superior diode performance, the IPZA60R060P7 empowers designers to push the boundaries of what is possible, creating systems that are simultaneously more efficient, more powerful, and more compact.

ICGOODFIND: The Infineon IPZA60R060P7 CoolMOS™ P7 sets a new standard for high-performance 600V switching, enabling a significant leap in efficiency and power density for next-generation power conversion systems.

Keywords:

1. High-Efficiency

2. Low RDS(on)

3. Fast Switching

4. Power Density

5. Robust Body Diode

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