Infineon BSM100GB120DLCK IGBT Module: Datasheet, Pinout, and Application Circuit Guide

The Infineon BSM100GB120DLCK is a high-performance IGBT module designed for robust power conversion in industrial applications. This module integrates a 6th generation trench-gate field-stop IGBT and an Emitter Controlled diode, offering an optimal balance between low saturation voltage and minimal switching losses. Housed in a common industry-standard EconoDUAL™ 3 package, it is engineered for high power density and reliable operation.

Datasheet Overview and Key Specifications

The datasheet for the BSM100GB120DLCK reveals its core electrical characteristics, which are critical for system design:

Voltage Ratings: It features a collector-emitter voltage (V_CES) of 1200 V, making it suitable for mains voltages up to 690 V.

Current Ratings: The module boasts a nominal collector current (I_C) of 100 A at 80°C and a maximum current of 200 A, providing substantial current-handling capability.

Low Saturation Voltage: A typical collector-emitter saturation voltage (V_CE(sat)) of 1.85 V at 100 A contributes to high efficiency by minimizing conduction losses.

Integrated Diode: The co-packaged anti-parallel diode has a low forward voltage, enhancing the module's performance in inverter applications.

Isolation Voltage: The baseplate offers a high isolation voltage (≥ 2500 Vrms), which is crucial for system safety and simplifying mechanical assembly.

Pinout Configuration

The BSM100GB120DLCK is a half-bridge (2-in-1) module, meaning it contains two IGBTs connected in a classic half-bridge configuration. The pinout is standardized for the EconoDUAL™ 3 footprint:

High-Side Switch (Top): The collector of the first IGBT (C1) is typically connected to the positive DC-link terminal (P). The emitter (E1) is the half-bridge output.

Low-Side Switch (Bottom): The collector of the second IGBT (C2) is connected to the half-bridge output (E1), and its emitter (E2) is connected to the negative DC-link terminal (N).

Gate Connections: Each IGBT has its own gate driver connection (G1 for high-side, G2 for low-side) and auxiliary emitter (E1-, E2-) for Kelvin sensing, which is essential for minimizing switching losses and preventing parasitic turn-on.

DC-Link and Auxiliary Pins: The module includes main power terminals (P, N) and often a temperature sensor (NTC) pin for thermal management.

Application Circuit Guide

A primary application for this module is in a three-phase voltage source inverter, the workhorse of motor drives and industrial automation.

1. Inverter Leg: Each phase of the inverter uses one half-bridge module. Three BSM100GB120DLCK modules are required to build a complete three-phase inverter bridge.

2. DC-Link Capacitors: A bank of electrolytic and film capacitors must be connected directly between the P and N terminals to smooth the DC input and provide the high peak currents required during switching.

3. Gate Driving: A dedicated gate driver IC (like Infineon's EiceDRIVER™ series) is mandatory for each IGBT. The driver must provide sufficient negative turn-off voltage (e.g., -15 V) to ensure safe and robust operation, preventing malfunction due to noise. The Kelvin emitter pins must be connected directly to the driver's ground reference to control the gate loop effectively.

4. Protection: The design must incorporate overcurrent protection (e.g., desaturation detection), over-temperature protection (using the built-in NTC), and soft-turn-off functions to safeguard the module under fault conditions.

5. Cooling: Due to the significant power dissipation, the module must be mounted on a high-performance heatsink with thermal interface material to maintain the junction temperature within safe limits, ensuring long-term reliability.

ICGOOODFIND

The Infineon BSM100GB120DLCK IGBT module stands as a robust and efficient solution for high-power industrial drives and inverters. Its excellent electrical characteristics, standardized package, and integration of advanced features like a Kelvin emitter make it a top choice for engineers designing systems that demand reliability, high power density, and superior performance.

Keywords:

IGBT Module

EconoDUAL™ 3

Half-Bridge Inverter

Gate Driver

Thermal Management