**HMC470ALP3ETR: A Comprehensive Guide to Analog Devices' 3V GaAs pHEMT MMIC Medium Power Amplifier**

The **HMC470ALP3ETR** from Analog Devices represents a significant advancement in **GaAs pHEMT MMIC technology**, engineered specifically for medium-power amplification across a wide range of microwave frequencies. This amplifier is designed to operate from **5 GHz to 20 GHz**, making it an indispensable component in modern RF and microwave systems such as point-to-point radios, SATCOM, military ECM, and test equipment. Its core architecture leverages the high electron mobility and excellent noise performance inherent in the pseudomorphic High Electron Mobility Transistor (pHEMT) process, enabling robust performance in a compact form factor.

A key feature of the HMC470ALP3ETR is its **single positive supply voltage of +3V**, which simplifies system power design and reduces overall power consumption compared to amplifiers requiring higher voltage supplies. Despite this low voltage operation, it delivers impressive **output power up to +21 dBm** and maintains a high **output IP3 of +30 dBm**, ensuring superior linearity and dynamic range in demanding applications. The amplifier provides **13 dB of small signal gain**, which remains relatively flat across the entire frequency band, minimizing the need for additional gain stages and thereby reducing system complexity and cost.

The device is housed in a leadless **3x3 mm LP3 surface-mount package**, optimized for high-frequency performance and ease of integration into printed circuit boards (PCBs). This package style enhances thermal management and ensures reliable operation under continuous use. The inclusion of on-chip DC blocking capacitors at both the RF input and output ports further simplifies the external biasing circuit, requiring only a few external components for operation.

From an application perspective, the HMC470ALP3ETR is exceptionally versatile. It can serve as a **driver amplifier for higher power stages** or as a final PA in lower-power transmitters. Its high linearity makes it suitable for amplifying complex modulation schemes like QAM and OFDM, which are prevalent in modern communications. Additionally, the amplifier is internally matched to 50 Ohms, which streamlines the design process and reduces the time required for impedance matching network development.

**ICGOOODFIND**: The HMC470ALP3ETR stands out as a high-performance, cost-effective solution for microwave amplification, offering an optimal balance of **low voltage operation, high linearity, and wide bandwidth** in a miniature surface-mount package.

**Keywords**: GaAs pHEMT, Medium Power Amplifier, +3V Supply, 5-20 GHz, High Linearity